Gallium nitride substrate and gallium nitride layer...

Details Gallium nitride substrate and gallium nitride layer... Gallium nitride substrate and gallium nitride layer...

2011-03-29

2011-03-29

Richards, N Drew (Department: 2895)

Semiconductor device manufacturing: process

Formation of semiconductive active region on any substrate

On insulating substrate or layer

C257S078000

Reexamination Certificate

active

07915149

ABSTRACT:
There is disclosed a method for forming a gallium nitride layer of which resistivity is 1×106Ω·cm or more, including steps of: forming a gallium nitride layer containing iron on a substrate; and heating said gallium nitride layer formed on said substrate.

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patent: 2005-306723 (2005-11-01), None
Hubbard, S.M. “High-resistivity GaN buffer templates and their optimization for GaN-based HFETs” Jour. of Crys. Grow. 284 pp. 297-305 published Sep. 8, 2005.

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