Growing method of GaAs quantum dots using chemical beam epitaxy

Details Growing method of GaAs quantum dots using chemical beam epitaxy Growing method of GaAs quantum dots using chemical beam epitaxy

1998-08-17

2000-03-07

Bowers, Charles

Semiconductor device manufacturing: process

Formation of semiconductive active region on any substrate

Fluid growth from gaseous state combined with subsequent...

438 46, 438962, H01L 21208

Patent

active

060339721

ABSTRACT:
The formation of self-assembled GaAs quantum dots on (100) GaAs via chemical beam epitaxy (CBE) technique using triethylgallium (TEGa) and arsine (AsH.sub.3) is disclosed. GaAs quantum dots are easy to grow from Ga-droplets which are successively supplied with arsine with neither pattern definition nor pre-treatment steps prior to the growth. The density and the size of Ga-droplets are found to be sensitive to the growth conditions, such as the growth temperature, the beam equivalent pressure of TEGa, and the amount of TEGa supplied. This invention suggests that, unlike Stranski-Krastanow growth, the Ga-droplet-induced CBE technique can be a useful method for the fabrication of quantum dot structure by simple change of gas supply mode, even in lattice-matched system.

REFERENCES:
patent: 5229320 (1993-07-01), Ugajin
patent: 5281543 (1994-01-01), Fukuzawa et al.
patent: 5482890 (1996-01-01), Liu et al.
patent: 5543354 (1996-08-01), Richard et al.
patent: 5614435 (1997-03-01), Petroff et al.
Lee et al., "Chemical beam epitaxial growth of InGaAs quantum dots using the droplet rechnique"; Ungyong Mulli, vol. 10, No. 3, p. 235-240, May 1997.
D.S.L. Mui et al., "Surface Migration Induced self-aligned InAs islands grown by molecular beam epitaxy", pp. 1620-1622. Applied Physics Letters 66 (13) Mar. 95.
M. Kitamura et al., "In situ fabrication of self-aligned InGaAs quantum dots on GaAs multiatomic steps by metalorganic chemical vapor deposition", pp. 3663-3665. Applied Physic Letter 66 (26) Jun. 95.
Zh. I. Alferov et al., "An injection heterojunction laser based on arrays of vertically coupled InAs quantum dots in a GaAs matrix", pp. 194-196. Semiconductors 30(2) Feb. 96.

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