GaN substrate, substrate with epitaxial layer, semiconductor...

Details GaN substrate, substrate with epitaxial layer, semiconductor... GaN substrate, substrate with epitaxial layer, semiconductor...

2008-06-11

2010-10-19

Smith, Zandra (Department: 2822)

Semiconductor device manufacturing: process

Formation of semiconductive active region on any substrate

Fluid growth from gaseous state combined with preceding...

C438S507000, C438S945000, C438S973000, C257SE21097

Reexamination Certificate

active

07816238

ABSTRACT:
A GaN substrate having a large diameter of two inches or more by which a semiconductor device such as a light emitting element with improved characteristics such as luminance efficiency, an operating life and the like can be obtained at low cost industrially, a substrate having an epitaxial layer formed on the GaN substrate, a semiconductor device, and a method of manufacturing the GaN substrate are provided. A GaN substrate has a main surface and contains a low-defect crystal region and a defect concentrated region adjacent to low-defect crystal region. Low-defect crystal region and defect concentrated region extend from the main surface to a back surface positioned on the opposite side of the main surface. A plane direction [0001] is inclined in an off-angle direction with respect to a normal vector of the main surface.

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