Use of a sacrificial layer to facilitate metallization for...
Use of a silicon carbide adhesion promoter layer to enhance...
Use of amorphous carbon as a removable ARC material for dual...
Use of amorphous carbon for gate patterning
Use of boron carbide as an etch-stop and barrier layer for...
Use of conductive electrolessly deposited etch stop layers,...
Use of germanium dioxide and/or alloys of GeO2 with silicon...
Use of hard masks during etching of openings in integrated circu
Use of hydrogen doping for protection of low-k dielectric...
Use of implanted ions to reduce oxide-nitride-oxide (ONO)...
Use of membrane properties to reduce residual stress in an...
Use of membrane properties to reduce residual stress in an...
Use of metallocenes to inhibit copper oxidation during...
Use of nitrides for flip-chip encapsulation
Use of nitrides for flip-chip encapsulation
Use of organic spin on materials as a stop-layer for local...
Use of palladium in IC manufacturing
Use of PE-SiON or PE-Oxide for contact or via photo and for...
Use of PE-SiON or PE-OXIDE for contact or via photo and for...
Use of photoresist in substrate vias during backside grind