Use of amorphous carbon for gate patterning

Details Use of amorphous carbon for gate patterning Use of amorphous carbon for gate patterning

2006-03-21

2006-03-21

Fourson, George (Department: 2823)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

Insulated gate formation

Reexamination Certificate

active

07015124

ABSTRACT:
A method of producing an integrated circuit includes providing a mask definition structure above a layer of conductive material and providing a mask above the layer of conductive material and in contact with at least a portion of the mask definition structure. The mask definition structure comprises a first material and the mask comprises a second material, wherein at least one of the first and second materials comprises amorphous carbon. The mask definition structure is removed, and the layer of conductive material is patterned according to the mask.

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