Unidirectionally conductive materials for interconnection
Uniform contact
Uniform passivation method for conductive features
Uniform silicide metal on epitaxially grown source and drain...
Unique feature design enabling structural integrity for...
Unitary interconnection structures integral with a...
Unitary interconnection structures integral with a...
Unlanded via process
Unsymmetrical ligand sources, reduced symmetry...
Unsymmetrical ligand sources, reduced symmetry...
Upper redundant layer for damascene metallization
Use of a capping layer to reduce particle evolution during...
Use of a low resistivity Cu.sub.3 Ge interlayer as an adhesion p
Use of a novel capped anneal procedure to improve salicide...
Use of a plasma source to form a layer during the formation of a
Use of a sacrificial layer to facilitate metallization for...
Use of a silicon carbide adhesion promoter layer to enhance...
Use of amorphous carbon as a removable ARC material for dual...
Use of boron carbide as an etch-stop and barrier layer for...
Use of conductive electrolessly deposited etch stop layers,...