Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2005-06-28
2009-08-11
Ghyka, Alexander G (Department: 2812)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C257SE21170, C257SE21271, C427S525000, C534S015000, C556S032000, C556S034000, C556S035000
Reexamination Certificate
active
07572731
ABSTRACT:
The present invention provides metal-containing compounds that include at least one β-diketiminate ligand, and methods of making and using the same. In some embodiments, the metal-containing compounds are homoleptic complexes that include unsymmetrical β-diketiminate ligands. In other embodiments, the metal-containing compounds are heteroleptic complexes including at least one β-diketiminate ligand. The compounds can be used to deposit metal-containing layers using vapor deposition methods. Vapor deposition systems including the compounds are also provided. Sources for β-diketiminate ligands are also provided.
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U.S. Appl. No. 12/246,772, filed Oct. 7,
Millward Dan
Quick Timothy A.
Uhlenbrock Stefan
Ghyka Alexander G
Micro)n Technology, Inc.
Mueting Raasch & Gebhardt, P.A.
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