Unitary interconnection structures integral with a...

Details Unitary interconnection structures integral with a... Unitary interconnection structures integral with a...

2007-12-25

2007-12-25

Nguyen, Tuan H. (Department: 2813)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S622000, C438S637000

Reexamination Certificate

active

10932416

ABSTRACT:
An interconnection structure is provided by forming a first damascene interconnect structure that directly connects a first active area in a substrate, a first conductive line on the substrate and/or a first electrode on the substrate with a second active area in the substrate, a second conductive line on the substrate and/or a second electrode on the substrate. A second damascene interconnect structure may directly connect the first active area, the first conductive line and/or the first electrode to the second active area, the second conductive line and/or the second electrode. The first active area, the first conductive line and/or the first electrode connected to the second active area, the second conductive line and/or the second electrode by the first damascene interconnect structure may be different from the first active area, the first conductive line and/or the first electrode and the second active area, the second conductive line and/or the second electrode connected by the second damascene interconnect structure.

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patent: 5683941 (1997-11-01), Kao et al.
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patent: 6534393 (2003-03-01), Zhou et al.
patent: 2002/0014925 (2002-02-01), Ochiai

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