Uniform silicide metal on epitaxially grown source and drain...

Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material

Reexamination Certificate

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Reexamination Certificate

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07425500

ABSTRACT:
A method for fabricating a three-dimensional transistor is described. Atomic Layer Deposition of nickel, in one embodiment, is used to form a uniform silicide on all epitaxially grown source and drain regions, including those facing downwardly.

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