Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2005-02-01
2008-08-19
Whitehead, Jr., Carl (Department: 2813)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S694000, C438S754000, C257S758000
Reexamination Certificate
active
07413976
ABSTRACT:
The top surfaces of conductive features are treated with a treatment solution before forming a passivation layer over the conductive features. The treatment solution includes a cleaning solution and a chemical grafting precursor. The treatment solution may also include a leveling and wetting agent to improve coverage uniformity of the chemical grafting precursor. The method results in a uniform passivation layer formed over conductive features across a surface of a workpiece.
REFERENCES:
patent: 6251710 (2001-06-01), Radens et al.
patent: 6277450 (2001-08-01), Katoot et al.
patent: 6774051 (2004-08-01), Chung et al.
patent: 2006/0141156 (2006-06-01), Viel et al.
Shih Chien-Hsueh
Su Hung-Wen
Tsai Minghsing
Jr. Carl Whitehead
Rodgers Colleen E
Slater & Matsil L.L.P.
Taiwan Semiconductor Manufacturing Company , Ltd.
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