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Semiconductor device having a backplate electrode

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Semiconductor device having a ceramic package

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Semiconductor device having a hollow around a gate electrode and

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Semiconductor device having a layer of titanium nitride on the s

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Semiconductor device having a light transparent window and a met

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Semiconductor device having a pedestal and method of forming

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Semiconductor device having a radiation resistance and method fo

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Semiconductor device having a region doped to a level exceeding

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Semiconductor device having a semiconductor chip mounted on an i

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Semiconductor device having a SOI substrate and fabrication meth

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Semiconductor device having a ternary boron nitride film and a m

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Semiconductor device having an improved anti-radioactivity and m

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Semiconductor device having an insulator film of silicon oxide i

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Semiconductor device having an isolation region enriched in oxyg

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Semiconductor device having ball-bonded pads

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Semiconductor device having bonding pad comprising buffer layer

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Semiconductor device having capacitor and manufacturing method t

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Semiconductor device having die pad locking to substantially red

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Semiconductor device having dielectric breakdown protection elem

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Semiconductor device having different impurity concentration wel

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