Semiconductor device having a pedestal and method of forming

Details Semiconductor device having a pedestal and method of forming Semiconductor device having a pedestal and method of forming

1998-07-24

2000-03-07

Niebling, John F.

Fishing, trapping, and vermin destroying

438197, 438276, 438278, 438370, 438301, H01L 218238

Patent

active

06033231&

ABSTRACT:
A graded-channel semiconductor device (10) is formed in a pedestal (12). The pedestal (12) is formed on a substrate (11) and improves the electrical characteristics of the device (10) compared to conventional device structures. The pedestal (12) has sides (13) that are bordered by a first dielectric layer (24) to provide electrical isolation. An interconnect structure (90) can be optionally formed in conjunction with the formation of the device (10). The interconnect structure (90) has a plurality of conductors (60,97) that can be used to transport electrical signals across the device (10).

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