Semiconductor device having dielectric breakdown protection elem

Details Semiconductor device having dielectric breakdown protection elem Semiconductor device having dielectric breakdown protection elem

1989-12-19

1992-01-07

James, Andrew J.

Fishing, trapping, and vermin destroying

357 51, 357 55, 437 20, 437 60, 437 48, H01L 2978, H01L 2702, H01L 2906, H01L 21265

Patent

active

050796097

ABSTRACT:
A semiconductor device exposed to irradiation (21, 22) of charged particles in a fabrication process thereof includes: at least a first conductive region (3, 1) and a second conductive region (4a, 4b) formed at different positions, electrically insulated from each other; a third coductive region (8 , 9) provided at least over the first conductive region (3, 1) and the second conductive region (4a, 4b); a first insulator layer region (5, 7) sandwiched between the first conductive region (3, 1) and the third conductive region (8, 9) to insulate the first and third conductive regions from each other; and a second insulator layer region (6a, 6b) sandwiched between the second conductive region (4a, 4b) and the third conductive region (8, 9) to insulate the second and third conductive regions from each other, and the second conductive region (4a, 4b) has a portion shaped to cause dielectric breakdown to be more liable to occur in the second insulator layer region (6a, 6b) than in the first insulator layer region (5, 7).

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W. L. Wright, "Electrostatic Discharge Protection of FET Gates with Thin Film Capacitors", IBM Technical Disclosure Bulletin, vol. 21, No. 6, Nov. 1978, pp. 2396-2397.

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