Semiconductor device having a hollow around a gate electrode and

Details Semiconductor device having a hollow around a gate electrode and Semiconductor device having a hollow around a gate electrode and

1995-06-26

1996-09-24

Wilczewski, Mary

Fishing, trapping, and vermin destroying

437912, 437927, H01L 21265

Patent

active

055590462

ABSTRACT:
A semiconductor device operating at a high frequency, includes: a semiconductor layer; a first electrode for being applied with a voltage to control a current flowing in the semiconductor layer; a second electrode and a third electrode electrically connected to the semiconductor layer, at least one of the second and third electrodes being elongated above the first electrode to form a hollow around the first electrode by surrounding the first electrode with the second and third electrodes and the semiconductor layer; a passivation film formed over the second and third electrodes; and wherein the first electrode is directly in contact with an atmosphere in the hollow.

REFERENCES:
patent: 4972250 (1990-11-01), Omori et al.
patent: 4992764 (1991-02-01), Ayasli
patent: 5331203 (1994-07-01), Wojnarowski et al.
patent: 5438305 (1995-08-01), Hikita et al.
P. D. Gardner et al., "Self-Aligned-Gate GaInAs Microwave MISFET's", IEEE Electron Device Letters, vol. EDL-7, No. 6, pp. 363-364 (Jun. 1986).
European Search Report for Corresponding Application No. 93117419.7, date mailed Jan. 7, 1994.
Webster's Ninth New Collegiate Dictionary, p. 401.

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