Semiconductor device having bonding pad comprising buffer layer

Details Semiconductor device having bonding pad comprising buffer layer Semiconductor device having bonding pad comprising buffer layer

1991-11-25

1994-02-22

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437 41, 437228, H01L 2128

Patent

active

052886611

ABSTRACT:
A semiconductor device according to the present invention comprises a substrate (4) in a periphery of which formed are elements isolating regions. A bonding pad (3) is formed above the elements isolating region with an isolation layer (7) provided therebetween. An underlying layer (12) having a buffering function is formed on a surface of the bonding pad and the semiconductor substrate. In case the elements isolating region is formed of LOCOS film (30), the underlying layer is formed between the bonding pad and the LOCOS film. In case the elements isolating region is of a field-shield structure (13, 14), the underlying layer (12) is formed by separating a part of a gate electrode layer (14) of the field shield into an island. The underlying layer buffers external force applied on the bonding pad in a bonding processing to prevent generation of cracks in the semiconductor layer.

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