Semiconductor device having an improved anti-radioactivity and m

Details Semiconductor device having an improved anti-radioactivity and m Semiconductor device having an improved anti-radioactivity and m

1996-05-10

1998-05-05

Niebling, John

Fishing, trapping, and vermin destroying

437 41, 437 43, H01L 21265

Patent

active

057473544

ABSTRACT:
The invention provides an n-channel MOS field effect transistor with an anti-radioactivity. The transistor includes leak guard boron diffusion layers, each of which has a junction surface to an isolation oxide film. The junction surface exists up to a deeper level than a predetermined depth corresponding to a junction surface of n-type source and drain diffusion layers and a p-type silicon substrate. Such leak guard boron diffusion layer is formed by ion-implantation of boron through a gate oxide film, after a formation of the gate oxide film. Such leak guard boron diffusion layers have a higher impurity concentration. The existence of the leak guard boron diffusion layers suppresses a leak to be generated by radiation damages of silicon oxide film such as the gate oxide film and the isolation oxide film.

REFERENCES:
patent: 4987093 (1991-01-01), Teng et al.
patent: 5026656 (1991-06-01), Matloubian
patent: 5556798 (1996-09-01), Hong

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