Semiconductor device having different impurity concentration wel

Details Semiconductor device having different impurity concentration wel Semiconductor device having different impurity concentration wel

1992-08-12

1993-11-09

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

437 30, 437 34, 437 47, 437 52, H01L 2170, H01L 2700

Patent

active

052602265

ABSTRACT:
A semiconductor device comprises an N-type semiconductor substrate, a first P-type well formed in the semiconductor substrate, a second P-type well formed adjacent to the first P-type well in the semiconductor substrate, the surface impurity concentration of the second P-type well being set lower than that of the first P-type well, a DRAM memory cell structure formed in the first P-type well, and an MOS transistor structure formed in the second P-type well to function in combination with the memory cell structure.

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"Physics and Technology of Semiconductor Devices", A. S. Grove, Fairchild Semiconductor, John Wiley & Sons, Inc., p. 209 (date unknown).
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