Semiconductor device having a SOI substrate and fabrication meth

Details Semiconductor device having a SOI substrate and fabrication meth Semiconductor device having a SOI substrate and fabrication meth

1990-10-31

1992-11-10

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437 21, 437925, 437974, 148DIG135, H01L 21304

Patent

active

051622548

ABSTRACT:
A method for producing a semiconductor device on a semiconductor layer provided on an insulator layer comprises the steps of providing an opening on the semiconductor layer to expose a top surface of the insulator layer, depositing a first material layer that has a hardness exceeding the hardness of the semiconductor layer on the semiconductor layer including the exposed top surface, and patterning the first material layer such that a patterned region of the first inorganic material is left in the opening with a gap separating the patterned region from the side wall of the semiconductor layer. The method also comprises the steps of depositing a second material layer of a second inorganic material having a hardness substantially equal to the hardness of the semiconductor layer such that the second material layer covers the semiconductor layer including the opening wherein the patterned region of the first inorganic material is formed, said second material layer being deposited such that the second material layer covers the side wall of the opening and fills the gap between the side wall of the patterned region and the side wall of the opening, and lapping a top surface of the semiconductor layer that is covered by the second material layer, starting from a top surface of the second material layer and proceeding toward the insulator layer until a top surface of the patterned region of the first inorganic material is exposed.

REFERENCES:
patent: 4575925 (1986-03-01), Kanbara et al.
patent: 4933298 (1990-06-01), Hasegawa
patent: 4983251 (1991-01-01), Haisma et al.
J. B. Lasky, S. R. Stiffler, F. R. White, J. R. Abernathey; Bonding and Etch-Back; Silicon-On-Insulator (SOI); pp. 684-687; IEDM 1985.

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