Semiconductor device having a layer of titanium nitride on the s

Details Semiconductor device having a layer of titanium nitride on the s Semiconductor device having a layer of titanium nitride on the s

1990-07-05

1992-03-03

Hille, Rolf

Fishing, trapping, and vermin destroying

357 65, 357 67, 437192, 437194, 437195, 437197, H01L 2348, H01L 2944, H01L 2952, H01L 2960

Patent

active

050937103

ABSTRACT:
Method of fabricating a semiconductor device having minute contact holes formed in an insulating film that is formed on a first metal layer. A layer of titanium nitride is formed on the side walls in the holes and on the insulating layer. A second metal layer is formed on the layer of titanium nitride. The second metal layer consists mainly of aluminum and is not thinned in the holes. The second metal layer and the underlying titanium nitride layer are photolithographically patterned.

REFERENCES:
patent: 4840302 (1989-06-01), Gardner et al.
patent: 4922321 (1990-05-01), Arai et al.
patent: 4961822 (1990-10-01), Liao et al.
patent: 4965656 (1990-10-01), Koubuchi et al.
patent: 4974056 (1990-11-01), Brodsky et al.
T. Hariu et al., The Properties of Al-Cu/Ti Films Sputter Deposited at Elevated Temperatures and High DC Bias, pp. 210-214, IEEE/IRPS 1989.

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