Semiconductor device having an insulator film of silicon oxide i

Details Semiconductor device having an insulator film of silicon oxide i Semiconductor device having an insulator film of silicon oxide i

1991-06-20

1993-06-08

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

437 37, H01L 21265

Patent

active

052179087

ABSTRACT:
A method for fabricating a semiconductor device comprises the steps of providing an oxide film containing silicon and oxygen on a substrate, introducing species containing oxygen into the oxide film by an ion implantation process, and providing an electrode on the oxide film.

REFERENCES:
patent: 4837172 (1989-06-01), Mizuno et al.
patent: 4975126 (1990-12-01), Margail et al.
patent: 5077225 (1991-12-01), Lee

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