Semiconductor device having capacitor and manufacturing method t

Details Semiconductor device having capacitor and manufacturing method t Semiconductor device having capacitor and manufacturing method t

1994-08-04

1997-04-29

Thomas, Tom

Fishing, trapping, and vermin destroying

438396, 438763, 438958, H01L 218242

Patent

active

056248644

ABSTRACT:
A semiconductor device forming a capacitor through an interlayer insulating layer on a semiconductor substrate on which an integrated circuit is formed. This semiconductor device has an interlayer insulating layer with moisture content of 0.5 g/cm.sup.3 or less, which covers the capacitor in one aspect, and has a passivation layer with hydrogen content of 10.sup.21 atoms/cm.sup.3 or less, which covers the interconnections of the capacitor in other aspect. By thus constituting, deterioration of the capacitor dielectric can be prevented which brings about the electrical reliability of the ferroelectric layer or high dielectric layer.

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Kitabatake, "Hydrogen free SiN films deposited by ion beam sputtering" Appl. Phys. Lett. Oct. 1986 pp. 927-929.

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