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Transistor which can minimize the DC resistance of the...

Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified configuration
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Transistor with a charge induced drain extension

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent

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Transistor with a germanium-based channel encased by a gate...

Active solid-state devices (e.g. – transistors – solid-state diode – Heterojunction device – Field effect transistor
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Transistor with a plurality of layers with different Ge...

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Charge transfer device
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Transistor with a predetermined current gain in a bipolar integr

Active solid-state devices (e.g. – transistors – solid-state diode – Bipolar transistor structure – Plural non-isolated transistor structures in same structure
Patent

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Transistor with a quantum-wave interference layer

Active solid-state devices (e.g. – transistors – solid-state diode – Bipolar transistor structure – With base region having specified doping concentration...
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Transistor with A-face conductive channel and trench...

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
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Transistor with an offset gate structure

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
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Transistor with an offset gate structure

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
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Transistor with an ultra short channel length defined by a...

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
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Transistor with asymmetric silicon germanium source region

Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Heterojunction
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Transistor with common base region

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent

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Transistor with constant voltage diode

Active solid-state devices (e.g. – transistors – solid-state diode – With means to increase breakdown voltage threshold – Field relief electrode
Patent

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Transistor with contact over gate active area

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
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Transistor with dielectric stressor element fully underlying...

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
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Transistor with dopant-bearing metal in source and drain

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
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Transistor with doped gate dielectric

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
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Transistor with dynamic source/drain extensions

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
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Transistor with ESD protection

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
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Transistor with floating gate and electret

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
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