Transistor with contact over gate active area

Details Transistor with contact over gate active area Transistor with contact over gate active area

2011-01-25

2011-01-25

Geyer, Scott B (Department: 2812)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

Reexamination Certificate

active

07875913

ABSTRACT:
A transistor contact over a gate active area includes a transistor gate formed on a substrate of an integrated circuit. A gate insulator is formed beneath the transistor gate and helps define an active area for the transistor gate. An insulating layer is formed over the transistor gate. A metal contact plug is formed within a portion of the insulating layer that lies over the active area such that the metal contact plug forms an electrical contact with the transistor gate.

REFERENCES:
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patent: 2007/0111495 (2007-05-01), Hwang
patent: 2008/0029900 (2008-02-01), Fukui
PCT/US2009/043385, PCT International Search Report and Written Opinion of the International Searching Authority, mailed Aug. 18, 2009, 13 pages.

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