Active solid-state devices (e.g. – transistors – solid-state diode – With means to increase breakdown voltage threshold – Field relief electrode
Patent
1997-06-13
1998-11-10
Thomas, Tom
Active solid-state devices (e.g., transistors, solid-state diode
With means to increase breakdown voltage threshold
Field relief electrode
257492, 257493, 257572, 257546, 257551, 257552, 257603, 257606, H01L 2976
Patent
active
058348239
ABSTRACT:
A power transistor incorporating a constant-voltage diode maintains the breakdown voltage of the constant-voltage diode at a specified level and prevents local breakdown of an insulating film located between an A1 field plate electrode and a base region of the transistor by spacing the A1 field plate electrode located on a collector region by a distance "d" from the base region.
REFERENCES:
patent: 3626623 (1971-12-01), Sakurai et al.
patent: 5646433 (1997-07-01), Jimenez
patent: 5691554 (1997-11-01), Mathews
Abraham Fetsum
Mitsubishi Denki & Kabushiki Kaisha
Thomas Tom
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