Transistor with constant voltage diode

Active solid-state devices (e.g. – transistors – solid-state diode – With means to increase breakdown voltage threshold – Field relief electrode

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Details

257492, 257493, 257572, 257546, 257551, 257552, 257603, 257606, H01L 2976

Patent

active

058348239

ABSTRACT:
A power transistor incorporating a constant-voltage diode maintains the breakdown voltage of the constant-voltage diode at a specified level and prevents local breakdown of an insulating film located between an A1 field plate electrode and a base region of the transistor by spacing the A1 field plate electrode located on a collector region by a distance "d" from the base region.

REFERENCES:
patent: 3626623 (1971-12-01), Sakurai et al.
patent: 5646433 (1997-07-01), Jimenez
patent: 5691554 (1997-11-01), Mathews

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