Transistor with common base region

Details Transistor with common base region Transistor with common base region

1994-07-08

1995-03-07

Munson, Gene M.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257339, 257342, H01L 2978, H01L 2910

Patent

active

053960971

ABSTRACT:
A transistor (200) comprises a single, common base region (202). One or more source regions (112) are formed in the base region (202). One or more gate regions (120) overly the common base (202) and the source regions (112). In an alternate embodiment, the gate regions (320) have a raised central portion (321). In yet another embodiment, certain source regions (402) are cross connected (404). Additionally, a polysilicon pattern (602) may be used which provides a gate finger feed network (614, 616, 618), and gate fingers (604, 606, 608, 620) having length less than one half of the longest die dimension.

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patent: 5093701 (1992-03-01), Nakagawa et al.
patent: 5208471 (1993-05-01), Mori et al.
patent: 5304831 (1994-04-01), Yilmax et al.

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