Transistor with floating gate and electret

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode

Reexamination Certificate

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Details

C257S315000, C257S316000, C257S253000

Reexamination Certificate

active

07960776

ABSTRACT:
A sensor includes a field effect transistor having a source, drain, a control gate and floating gate, wherein the floating gate has an extended portion extending away from the control gate. A sensing gate is capacitively coupled to the extended portion of the floating gate. A polymer electret sensing coating is electrically coupled to the sensing gate.

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Berry, R. B., et al., “Comparison of respiratory event detection by a polyvinylidene fluoride film airflow sensor and a pneumotachograph in sleep apnea patients.”,Chest, 128(3), (Sep. 2005),1331-8.
Kressmann, R. , et al., “Space-charge Electrets”,IEEE Transactions on Dielectrics and Electrical Insulation, 3(5), (Oct. 1996),607-623.

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