Transistor with a plurality of layers with different Ge...

Details Transistor with a plurality of layers with different Ge... Transistor with a plurality of layers with different Ge...

2011-05-17

2011-05-17

Chambliss, Alonzo (Department: 2892)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Charge transfer device

C257S285000, C257SE27061, C257SE21182, C257SE21619, C438S350000

Reexamination Certificate

active

07943969

ABSTRACT:
A transistor and a method of fabricating the same are provided. The transistor includes a SiGe epitaxial layer formed in a recess region of a substrate at both side of a gate electrode and a SiGe capping layer formed on the SiGe epitaxial layer. The transistor further includes a SiGe seed layer formed under the SiGe epitaxial layer and a silicon capping layer formed on the SiGe capping layer.

REFERENCES:
patent: 2008/0054347 (2008-03-01), Wang
patent: 2008/0157119 (2008-07-01), Tsai
patent: 2009/0075029 (2009-03-01), Thomas et al.

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