Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2011-08-02
2011-08-02
Richards, N Drew (Department: 2895)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S327000, C257S329000, C257S334000, C257S337000, C257S338000
Reexamination Certificate
active
07989882
ABSTRACT:
A transistor structure optimizes current along the A-face of a silicon carbide body to form an AMOSFET that minimizes the JFET effect in the drift region during forward conduction in the on-state. The AMOSFET further shows high voltage blocking ability due to the addition of a highly doped well region that protects the gate corner region in a trench-gated device. The AMOSFET uses the A-face conduction along a trench sidewall in addition to a buried channel layer extending across portions of the semiconductor mesas defining the trench. A doped well extends from at least one of the mesas to a depth within the current spreading layer that is greater than the depth of the trench. A current spreading layer extends between the semiconductor mesas beneath the bottom of the trench to reduce junction resistance in the on-state. A buffer layer between the trench and the deep well further provides protection from field crowding at the trench corner.
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Agarwal Anant
Jonas Charlotte
Zhang Qingchun
Cree Inc.
Garcia Joannie A
Richards N Drew
Withrow & Terranova, P.L.L.C.
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