Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1991-12-04
1993-09-07
Hille, Rolf
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257408, 257409, 257607, H01L 2976, H01L 2994, H01L 29167
Patent
active
052432122
ABSTRACT:
A product is taught which provides very shallow conductive regions in a semiconductor material by the formation of a fixed charge placed in an overlying dielectric layer which induces an inversion region in the underlying semiconductor. The inversion region so formed is used as a MOSFET drain extension between a drain contact region and the channel located beneath the gate region. The conductivity of the induced inversion region is controlled by the concentration of the ionic charge present in the dielectric layer.
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Hille Rolf
Loke Steven
Siliconix incorporated
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