Active solid-state devices (e.g. – transistors – solid-state diode – Bipolar transistor structure – Plural non-isolated transistor structures in same structure
Patent
1993-11-18
1996-01-02
Hille, Rolf
Active solid-state devices (e.g., transistors, solid-state diode
Bipolar transistor structure
Plural non-isolated transistor structures in same structure
257565, 257568, 257568, 257570, 257574, 257575, 257577, 257579, 257587, 257588, 257592, H01L 2972
Patent
active
054811325
ABSTRACT:
A bipolar integrated circuit with N-type wells (2) formed in a P-type substrate (1) includes in first wells, first transistors (EBC), the well of which constitutes the collector. P-type base region (7a) is formed in the first well with an N+ emitter region (8) formed in the base region. In at least a second well forming a collector, a composite second transistor (E'B'C') is constituted by an elemental third transistor (E.sub.1 B.sub.1 C') comprising regions of the same doping level as the first transistor and an elemental fourth transistor (E.sub.2 B.sub.2 C') having a base region (11) with a high doping level with respect to that of the bases of the first transistor. Emitter regions (8b, 12) of the elemental transistors are of the same doping level as that of the first transistors. The emitters and bases of the third and fourth elementary transistors are interconnected and constitute the emitter and the base of the composite second transistor.
REFERENCES:
patent: 3393349 (1968-07-01), Huffman
patent: 3504203 (1970-03-01), Haines
patent: 3573573 (1971-04-01), Moore
patent: 3628069 (1971-12-01), Najmann
patent: 3770519 (1973-11-01), Wiedmann
patent: 3810123 (1974-05-01), Baitinger et al.
patent: 4258379 (1981-03-01), Watanabe et al.
"Integrated NPN Transistors with Different Current Gains", R. C. Wong, IBM Technical Disclosure Bulletin vol. 27, No. 1A, Jun. 1984, pp. 234-236.
Hille Rolf
Martin Wallace Valencia
SGS-Thomson Microelectronics S.A.
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