LandOfFree - US Patents - Listing for Active solid-state devices (e.g., transistors, solid-state diode

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode

Offset spacer formation for strained channel CMOS transistor

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode

Offset vertical device

Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Chip mounted on chip

Offset-bonded, multi-chip semiconductor device

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode

Offset-gate-type semiconductor device

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode

Offset-gate-type semiconductor device

Active solid-state devices (e.g. – transistors – solid-state diode – Responsive to non-electrical signal – Magnetic field

Offset-reduced hall element

Active solid-state devices (e.g. – transistors – solid-state diode – Specified wide band gap semiconductor material other than... – Diamond or silicon carbide

Ohmic connection electrodes for p-type semiconductor diamonds

Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified material other than unalloyed aluminum

Ohmic contact configuration

Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified material other than unalloyed aluminum

Ohmic contact configuration

Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified material other than unalloyed aluminum

Ohmic contact electrodes for n-type semiconductor cubic boron ni

Active solid-state devices (e.g. – transistors – solid-state diode – Specified wide band gap semiconductor material other than...

Ohmic contact electrodes for N-type semiconductor cubic boron ni

Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified material other than unalloyed aluminum

Ohmic contact for III-V semiconductor materials

Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure

Ohmic contact for nitride-based semiconductor device

Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified material other than unalloyed aluminum

Ohmic contact for p-type GaAs

Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified material other than unalloyed aluminum

Ohmic contact for p-type group II-IV compound semiconductors

Active solid-state devices (e.g. – transistors – solid-state diode – Heterojunction device – Heterojunction formed between semiconductor materials which...

Ohmic contact improvement between layer of a semiconductor...

Active solid-state devices (e.g. – transistors – solid-state diode – Including semiconductor material other than silicon or... – Group ii-vi compound

Ohmic contact on p-type GaN

Active solid-state devices (e.g. – transistors – solid-state diode – Specified wide band gap semiconductor material other than... – Ii-vi compound

Ohmic contact on p-type GaN

Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified material other than unalloyed aluminum

Ohmic contact plug having an improved crack free TiN barrier...