Ohmic contact for III-V semiconductor materials

Details Ohmic contact for III-V semiconductor materials Ohmic contact for III-V semiconductor materials

1993-09-14

1995-07-04

Hille, Rolf

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified material other than unalloyed aluminum

257200, 257382, 257383, 257615, 257616, 257744, 257768, H01L 2348, H01L 2940, H01L 29161, H01L 29205

Patent

active

054303273

ABSTRACT:
An ohmic contact to a III-V semiconductor material is fabricated. First, a III-V semiconductor material is provided. Source/drain regions are then formed in the III-V semiconductor material. On the III-V semiconductor material, a contact system is formed which is dry etchable using reactive ions such as chlorine or fluorine and substantially free of arsenic. Subsequently, a portion of the contact system is dry etched using reactive ions such as chlorine or fluorine to leave a portion of the contact system remaining on the source/drain regions. Then, the III-V semiconductor material and the contact system are annealed in an atmosphere substantially free of arsenic at a temperature at which at least a part of the contact system is alloyed with the source/drain regions to form an ohmic contact with the source/drain regions of the III-V semiconductor material.

REFERENCES:
patent: 4830980 (1989-05-01), Hsieh
patent: 5093280 (1992-03-01), Tully
patent: 5144410 (1992-09-01), Johnson
Anderson et al., "Ohmic Contacts to GaAs for High-Temperature Device Applications", Proceedings of Conf. on High Tmep. Electronics Mar. 25-27, 1981, pp. 39-42.

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