Ohmic contact for p-type group II-IV compound semiconductors

Details Ohmic contact for p-type group II-IV compound semiconductors Ohmic contact for p-type group II-IV compound semiconductors

1991-05-15

1993-12-28

Hille, Rolf

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified material other than unalloyed aluminum

257 37, 257 99, 257743, H01L 2348, H01L 2940

Patent

active

052742695

ABSTRACT:
A ZnSe semiconductor device includes a ZnSe pn junction having p-type and n-type layers, and an ohmic contact to both layers. The ohmic contact to the p-type layer includes a p-type ZnSe crystalline semiconductor contact layer, and a conductive electrode layer characterized by a Fermi energy. The contact layer is doped with nitrogen shallow acceptors, characterized by a shallow acceptor energy, to a net acceptor concentration of at least 5.times.10.sup.17 cm.sup.-3. The contact layer also includes sufficient deep energy states between the shallow acceptor energy and the electrode layer Fermi energy to enable cascade tunneling by charge carriers.

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