Ohmic contact configuration

Details Ohmic contact configuration Ohmic contact configuration

2008-01-08

2008-01-08

Pham, Long (Department: 2814)

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified material other than unalloyed aluminum

C257S734000, C257S758000

Reexamination Certificate

active

07317252

ABSTRACT:
A contact configuration has an ohmic contact between a metalization layer and a semiconductor body of monocrystalline semiconductor material. An amorphous semiconductor layer is formed between the metalization layer and the monocrystalline semiconductor body. The layer is formed of the same semiconductor material as the body. The contact configuration is either produced by applying amorphous semiconductor material on the semiconductor body (e.g., sputtering, vapor deposition, glow discharge) or by damage formation in the semiconductor body.

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