Ohmic contact on p-type GaN

Details Ohmic contact on p-type GaN Ohmic contact on p-type GaN

2005-09-26

2009-02-24

Andújar, Leonardo (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Including semiconductor material other than silicon or...

Group ii-vi compound

C257S744000, C257S741000, C257S750000, C257S078000, C257S191000, C438S037000

Reexamination Certificate

active

07495314

ABSTRACT:
An ohmic contact in accordance with the invention includes a layer of p-type GaN-based material. A first layer of a group II-VI compound semiconductor is located adjacent to the layer of p-type GaN-based material. The ohmic contact further includes a metal layer that provides metal contact. A second layer of a different II-VI compound semiconductor is located adjacent to the metal layer.

REFERENCES:
patent: 5548137 (1996-08-01), Fan et al.
patent: 5585649 (1996-12-01), Ishikawa et al.
patent: 5604356 (1997-02-01), Shiraishi
patent: 6069367 (2000-05-01), Tomiya et al.
patent: 2005/0173728 (2005-08-01), Saxler

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