Ohmic contact electrodes for n-type semiconductor cubic boron ni

Details Ohmic contact electrodes for n-type semiconductor cubic boron ni Ohmic contact electrodes for n-type semiconductor cubic boron ni

1991-05-24

1994-02-08

Clark, Sheila V.

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified material other than unalloyed aluminum

257761, 257770, 257754, H01L 2948, H01L 2946, H01L 2962, H01L 2964

Patent

active

052851095

ABSTRACT:
An ohmic contact electrode formed on an n-type semiconductor cubic boron nitride by using a IVa metal; an alloy with a IVa metal; a metal with Si or S; an alloy with Si or S; a metal with B, Al, Ga, or In; an alloy with B, Al, Ga, or In; a Va metal; or an alloy with a Va metal.

REFERENCES:
patent: 5006914 (1991-04-01), Beetz, Jr.
patent: 5030583 (1991-07-01), Beetz, Jr.
patent: 5091208 (1992-07-01), Pryor
Kimura et al. "Humidity-Sensitive Electrical Properties and Switching Characteristics of BN Films", Thin Solid Films, vol. 70, No. 2, Aug. 1, 1980, Lausanne, pp. 351-362.
Mishima et al, "Ultraviolet Light-Emitting Diode of a Cubic Boron Nitride pn Junction Made at High Pressure", Applied Physics Letters, vol. 53, No. 11, Sep. 12, 1988, pp. 962-964.

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