LandOfFree - US Patents - Listing for Active solid-state devices (e.g., transistors, solid-state diode

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GaN crystal film, a group III element nitride semiconductor...

Active solid-state devices (e.g. – transistors – solid-state diode – Heterojunction device – With lattice constant mismatch

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GaN crystal substrate

Active solid-state devices (e.g. – transistors – solid-state diode – Test or calibration structure

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GaN crystal substrate, fabricating method of GaN crystal...

Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure

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GaN DHFET

Active solid-state devices (e.g. – transistors – solid-state diode – Heterojunction device – Heterojunction formed between semiconductor materials which...

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GAN group crystal base member having low dislocation...

Active solid-state devices (e.g. – transistors – solid-state diode – Heterojunction device – With lattice constant mismatch

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GaN group semiconductor light-emitting element with concave...

Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With reflector – opaque mask – or optical element integral...

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GaN heterojunction bipolar transistor with a p-type strained...

Active solid-state devices (e.g. – transistors – solid-state diode – Bipolar transistor structure

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GaN laser with refractory metal ELOG masks for intracavity...

Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With reflector – opaque mask – or optical element integral...

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GaN LED for flip-chip bonding and method of fabricating the...

Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With housing or contact structure

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GaN LED structure with p-type contacting layer grown at...

Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Heterojunction

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GaN LED with solderable backside metal

Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With particular semiconductor material

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GaN LEDs with improved output coupling efficiency

Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With reflector – opaque mask – or optical element integral...

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GaN light emitting diode with conductive outer layer

Active solid-state devices (e.g. – transistors – solid-state diode – Heterojunction device – With lattice constant mismatch

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GaN related compound semiconductor light-emitting device

Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With heterojunction

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Gan semiconductor device

Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With housing or contact structure

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GaN semiconductor light emitting device having a group II-VI...

Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With particular semiconductor material

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GaN semiconductor light emitting device having a group III-V sub

Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With particular semiconductor material

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GaN semiconductor light-emitting element and method for...

Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With heterojunction

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Gan single crystal

Active solid-state devices (e.g. – transistors – solid-state diode – Including semiconductor material other than silicon or...

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GaN substrate including wide low-defect region for use in...

Active solid-state devices (e.g. – transistors – solid-state diode – With means to control surface effects – Insulating coating

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