GaN semiconductor light-emitting element and method for...

Details GaN semiconductor light-emitting element and method for... GaN semiconductor light-emitting element and method for...

2007-01-12

2009-06-23

Purvis, Sue (Department: 2891)

Active solid-state devices (e.g., transistors, solid-state diode

Incoherent light emitter structure

With heterojunction

C257S095000, C257S096000, C257S097000, C257SE33007

Reexamination Certificate

active

07550775

ABSTRACT:
A GaN semiconductor light-emitting element is provided. The GaN semiconductor light-emitting element includes an island-type seed region composed of a GaN-based compound semiconductor disposed on a substrate; an underlying layer having a three-dimensional shape composed of a GaN-based compound semiconductor, disposed on at least the seed region; a first GaN-based compound semiconductor layer of a first conductivity type, an active layer composed of a GaN-based compound semiconductor, and a second GaN-based compound semiconductor layer of a second conductivity type disposed in that order on the underlying layer; a first electrode electrically connected to the first GaN-based compound semiconductor layer; and a second electrode disposed on the second GaN-based compound semiconductor layer. The top face of the seed region is the A plane, and at least one side face of the underlying layer is the S plane.

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