Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With reflector – opaque mask – or optical element integral...
Reexamination Certificate
2006-05-30
2006-05-30
Flynn, Nathan J. (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
With reflector, opaque mask, or optical element integral...
C257S103000, C438S022000, C438S042000
Reexamination Certificate
active
07053420
ABSTRACT:
Concaves and convexes1aare formed by processing the surface layer of a first layer1, and second layer2having a different refractive index from the first layer is grown while burying the concaves and convexes (or first crystal10is grown as concaves and convexes on crystal layer S to be the base of the growth, and second crystal20is grown, which has a different refractive index from the first crystal). After forming these concavo-convex refractive index interfaces1a(10a), an element structure, wherein semiconductor crystal layers containing a light-emitting layer A are laminated, is formed. As a result, the light in the lateral direction, which is generated in the light-emitting layer changes its direction by an influence of the concavo-convex refractive index interface and heads toward the outside. Particularly, when an ultraviolet light is to be emitted using InGaN as a material of a light-emitting layer, a quantum well structure is employed and all the layers between the quantum well structure and the low temperature buffer layer are formed of a GaN crystal, removing AlGaN. The quantum well structure preferably consists of a well layer made of InGaN and a barrier layer made of GaN, and the thickness of the barrier layer is preferably 6 nm–30 nm.
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Okagawa Hiroaki
Ouchi Yoichiro
Tadatomo Kazuyuki
Tsunekawa Takashi
Flynn Nathan J.
Leydig , Voit & Mayer, Ltd.
Mandala Jr. Victor A.
Mitsubishi Cable Industries Ltd.
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