GaN crystal substrate

Details GaN crystal substrate GaN crystal substrate

2007-04-03

2010-11-02

Bryant, Kiesha R (Department: 2891)

Active solid-state devices (e.g., transistors, solid-state diode

Test or calibration structure

C117S902000

Reexamination Certificate

active

07825409

ABSTRACT:
A GaN crystal substrate has a crystal growth surface on which a crystal is grown, and a rear surface opposite to the crystal growth surface. The crystal growth surface has a roughness Ra(C)of at most 10 nm, and the rear surface has a roughness Ra(R)of at least 0.5 μm and at most 10 μm. A ratio Ra(R)/Ra(C)of the surface roughness Ra(R)to the surface roughness Ra(C)is at least 50. Thus, a GaN crystal substrate of which front and rear surfaces are distinguishable from each other is provided, without impairing the morphology of a semiconductor layer grown on the GaN crystal substrate.

REFERENCES:
patent: 5212151 (1993-05-01), Takano et al.
patent: 6004405 (1999-12-01), Oishi et al.
patent: 2002/0185054 (2002-12-01), Xu et al.
patent: 2004/0135232 (2004-07-01), Bakel et al.
patent: 2004/0188804 (2004-09-01), Nakayama et al.
patent: 2004/0221799 (2004-11-01), Nakayama et al.
patent: 1 463 115 (2004-09-01), None
patent: 1 821 339 (2007-08-01), None
patent: 61-290708 (1986-12-01), None
patent: 2002-222746 (2002-08-01), None
patent: 2002-356398 (2002-12-01), None
patent: 2004-335645 (2004-11-01), None
patent: 2004335645 (2004-11-01), None
patent: 2007-049047 (2007-02-01), None
Extended European Search Report issued in European Patent Application No. EP 07005725.2-1215/1842942, dated May 25, 2009.

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