Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With particular semiconductor material
Patent
1998-09-08
2000-07-11
Tran, Minh Loan
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
With particular semiconductor material
257 94, 257615, 257627, H01L 3300
Patent
active
060876816
ABSTRACT:
A light emitting device employing gallium nitride type compound semiconductor which generates no crystal defect, dislocation and can be separated easily to chips by cleavage and a method for producing the same are provided. As a substrate on which gallium nitride type compound semiconductor layers are stacked, a gallium nitride type compound semiconductor substrate, a single-crystal silicon, a group II-VI compound semiconductor substrate, or a group III-IV compound semiconductur substrate is employed.
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Rohm & Co., Ltd.
Tran Minh Loan
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