Gan single crystal

Details Gan single crystal Gan single crystal

1994-10-11

1998-06-23

Thomas, Tom

Active solid-state devices (e.g., transistors, solid-state diode

Including semiconductor material other than silicon or...

257103, 257 76, 257 78, 257 12, 257614, C30B 3500, H01L 3300, H01L 2914

Patent

active

057708878

ABSTRACT:
A GaN single crystal having a full width at half-maximum of the double-crystal X-ray rocking curve of 5-250 sec and a thickness of not less than 80 .mu.m, a method for producing the GaN single crystal having superior quality and sufficient thickness permitting its use as a substrate and a semiconductor light emitting element having high luminance and high reliability, comprising, as a substrate, the GaN single crystal having superior quality and/or sufficient thickness permitting its use as a substrate.

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Nakamura "In Situ Monitoring of GaN Growth using Interference Effects" Japanesse Journal of Applied Physics vol. 30, No. 8, pp. 1620-1627, Aug. 1991.
Nakamura et al. "In Situ Monitoring and Hall Measurements of GaN Grown with GaN Buffer Layers" Journal of Applied Physics, vol. 71, No. 7, Jun. 1992.
Detchprohm et al. "Hydride vapor Phase Epitaxial growth of a High Quality GaN Film using a ZnO Buffer Layer" Applied Physic Letters, vol. 6, No. 22, Nov. 1992.

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