Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With reflector – opaque mask – or optical element integral...
Patent
1998-02-19
2000-07-18
Tran, Minh Loan
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
With reflector, opaque mask, or optical element integral...
257 95, 257103, H01L 3300
Patent
active
060910852
ABSTRACT:
An LED having a higher light coupling efficiency than prior art devices, particularly those based on GaN. An LED according to the present invention includes a substrate having a top surface, a first layer of a semiconducting material deposited on the top surface of the substrate, a light generation region deposited on the first layer, and a second layer of semiconducting material deposited on the first layer. Electrical contacts are connected to the first and second layers. In one embodiment, the top surface of the substrate includes protrusions and/or depressions for scattering light generated by the light generation region. In a second embodiment, the surface of the second layer that is not in contact with the first layer includes a plurality of protrusions having facets positioned such that at least a portion of the light generated by light generation layer strikes the facets and exits the surface of the second layer. In a third embodiment, the second layer includes a plurality of channels extending from the surface of the second layer that is not in contact with the light generation layer. The channels are filled with a material having an index of refraction less that that of the semiconducting material.
REFERENCES:
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patent: 5491350 (1996-02-01), Unno et al.
patent: 5814839 (1998-09-01), Hosoba
patent: 5912477 (1999-06-01), Negley
D. Kapoinek et al., "Anisotropic Epitaxial Lateral Growth in GaN Selective Area Epitaxy", Applied Physics Letters, vol. 71, No. 9, Sep. 1, 1997, pp. 1204-1206.
Agilent Technologie,s Inc.
Tran Minh Loan
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