GaN laser with refractory metal ELOG masks for intracavity...

Details GaN laser with refractory metal ELOG masks for intracavity... GaN laser with refractory metal ELOG masks for intracavity...

2005-09-09

2009-12-29

Parker, Kenneth A (Department: 2815)

Active solid-state devices (e.g., transistors, solid-state diode

Incoherent light emitter structure

With reflector, opaque mask, or optical element integral...

C257S094000, C257S095000, C257S096000, C257S099000, C257SE21566

Reexamination Certificate

active

07638810

ABSTRACT:
Refractory metal ELOG mask are used for GaN based VCSELs and edge emitter structures to serve as intracavity contacts. In these structures the refractory metal ELOG masks serve both as ohmic contact metals as well as masks for ELOG.

REFERENCES:
patent: 2002/0030198 (2002-03-01), Coman et al.
patent: 2005/0045894 (2005-03-01), Okuyama et al.

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