Active solid-state devices (e.g. – transistors – solid-state diode – Bipolar transistor structure
Reexamination Certificate
2006-05-30
2009-11-24
Monbleau, Davienne (Department: 2893)
Active solid-state devices (e.g., transistors, solid-state diode
Bipolar transistor structure
C257SE27046, C257SE29171
Reexamination Certificate
active
07622788
ABSTRACT:
A gallium nitride heterojunction bipolar transistor with a p-type strained InGaN base layer is provided. The gallium nitride heterojunction bipolar transistor includes a substrate, a highly doped collector contact layer located over the substrate, a low doped collector layer located over the collector contact layer, a p-type base layer located over the collector layer, a highly doped strained InGaN base layer located over the p-type base layer, a emitter layer located over the p-type strained InGaN base layer, a highly doped emitter contact layer located over the emitter layer, and an emitter metal electrode, a base metal electrode, and a collector metal electrode respectively located on the emitter contact layer, the p-type strained InGaN base layer, and the collector contact layer.
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Hsin Yue-Ming
Hsueh Kuang-Po
Sheu Jinn-Kong
Jianq Chyun IP Office
Monbleau Davienne
National Central University
Reames Matthew
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