GaN crystal substrate, fabricating method of GaN crystal...

Details GaN crystal substrate, fabricating method of GaN crystal... GaN crystal substrate, fabricating method of GaN crystal...

2011-04-19

2011-04-19

Jackson, Jr., Jerome (Department: 2815)

Active solid-state devices (e.g., transistors, solid-state diode

Incoherent light emitter structure

C257S103000, C257SE25019, C438S047000

Reexamination Certificate

active

07928447

ABSTRACT:
A GaN crystal substrate is provided, which has a diameter of not less than 20 mm and a thickness of not less than 70 μm and not more than 450 μm, and has a light absorption coefficient of not less than 7 cm−1and not more than 68 cm−1for light in the wavelength range of not less than 375 nm and not more than 500 nm. A fabricating method of the GaN crystal substrate, and a light-emitting device fabricated using the GaN crystal substrate are also provided.

REFERENCES:
patent: 6509651 (2003-01-01), Matsubara et al.
patent: 2004/0211355 (2004-10-01), Motoki et al.
patent: 2006/0264011 (2006-11-01), Hachigo et al.
patent: 2000-12900 (2000-01-01), None
patent: 2000-022212 (2000-01-01), None
patent: 2000022212 (2000-01-01), None
patent: 2002-299252 (2002-10-01), None
patent: 2002-368261 (2002-12-01), None
Japanese Notice of Grounds of Rejection, w/ English a translation thereof, issued in Japanese Patent Application No. JP 2004-020078 dated on Nov. 18, 2008.

Affiliated with

Also associated with

Rating

GaN crystal substrate, fabricating method of GaN crystal... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with GaN crystal substrate, fabricating method of GaN crystal..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and GaN crystal substrate, fabricating method of GaN crystal... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2629693