GaN light emitting diode with conductive outer layer

Details GaN light emitting diode with conductive outer layer GaN light emitting diode with conductive outer layer

2005-05-24

2005-05-24

Baumeister, Bradley (Department: 2815)

Active solid-state devices (e.g., transistors, solid-state diode

Heterojunction device

With lattice constant mismatch

C257S099000, C257S103000

Reexamination Certificate

active

06897494

ABSTRACT:
A GaN based LED comprises: a three layer buffer which is a template for growth of a high quality I GaN platform for quality growth of subsequent layers; a light emitting structure; and complementary N and P electrode structures which spread current flowing between the electrodes fully across the light emitting structure.

REFERENCES:
patent: 4145707 (1979-03-01), Sadamasa et al.
patent: 4214251 (1980-07-01), Schairer
patent: 4864370 (1989-09-01), Gaw et al.
patent: 5309001 (1994-05-01), Watanabe et al.
patent: 5696389 (1997-12-01), Ishikawa et al.
patent: 5698865 (1997-12-01), Gerner et al.
patent: 5877558 (1999-03-01), Nakamura et al.
patent: 6091197 (2000-07-01), Sun et al.
patent: 6133589 (2000-10-01), Krames et al.
patent: 6147364 (2000-11-01), Itaya et al.
patent: 6236066 (2001-05-01), Shiba
patent: 6248607 (2001-06-01), Tsutsui
patent: 6255129 (2001-07-01), Lin
patent: 6268618 (2001-07-01), Miki et al.
patent: 6307218 (2001-10-01), Steigerwald et al.
patent: 6429032 (2002-08-01), Okuyama et al.
patent: 6614056 (2003-09-01), Tarsa et al.
patent: 4-78174 (1992-03-01), None
patent: 10-308534 (1998-11-01), None
Et al. “Thermal Stability of Ohmic Contacts to n-InxGa1-xN,” Mat. Res. Symp. Proc. vol. 395, 1996; pp. 825-830.

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