GaN LED for flip-chip bonding and method of fabricating the...

Details GaN LED for flip-chip bonding and method of fabricating the... GaN LED for flip-chip bonding and method of fabricating the...

2005-09-27

2005-09-27

Jackson, Jerome (Department: 2815)

Active solid-state devices (e.g., transistors, solid-state diode

Incoherent light emitter structure

With housing or contact structure

C257S778000, C438S038000, C438S047000, C438S604000

Reexamination Certificate

active

06949773

ABSTRACT:
A GaN light emitting diode for flip-chip bonding, with sufficient bonding area, optimized electrode arrangement, and improved brightness and reliability, includes n-electrodes and a p-electrode which are formed as stripes. The n-electrodes are positioned at equal distances from the p-electrode and arranged in parallel, thus the electric current is not concentrated into a predetermined portion, but uniformly flows through the light emitting diode without reducing a light emitting area.

REFERENCES:
patent: 5696389 (1997-12-01), Ishikawa et al.
patent: 5914501 (1999-06-01), Antle et al.
patent: 6078064 (2000-06-01), Ming-Jiunn et al.
patent: 6307218 (2001-10-01), Steigerwald et al.
patent: 6333522 (2001-12-01), Inoue et al.
patent: 6380564 (2002-04-01), Chen et al.
patent: 6455878 (2002-09-01), Bhat et al.
patent: 6614172 (2003-09-01), Chiu et al.
patent: 6650018 (2003-11-01), Zhao et al.

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