Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Heterojunction
Reexamination Certificate
2006-09-12
2006-09-12
Richards, N. Drew (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Thin active physical layer which is
Heterojunction
C257S079000, C257S094000, C257S102000, C257S103000, C257SE33025, C257SE33026, C257SE33028, C257SE33029
Reexamination Certificate
active
07105850
ABSTRACT:
Disclosed is a GaN LED structure with a p-type contacting layer using Al—Mg-codoped In1−yGayN grown at low temperature, and having low resistivity. The LED structure comprises, from the bottom to top, a substrate, a buffer layer, an n-type GaN layer, an active layer, a p-type shielding layer, and a p-type contacting layer. In this invention, Mg and Al are used to co-dope the In1−yGayN to grow a low resistive p-type contacting layer at low temperature. Because of the Al—Mg-codoped, the light absorption problem of the p-type In1−yGayN layer is improved. The product, not only has the advantage of convenience of the p-type contacting layer for being manufactured at low temperature, but also shows good electrical characteristics and lowers the operating voltage of the entire element so that the energy consumption during operation is reduced and the yield rate is increased.
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Chien Fen-Ren
Tu Ru-Chin
Wen Tzu-Chi
Wu Liang-Wen
Yu Cheng-Tsang
Fletcher Sean
Formosa Epitaxy Incorporation
Richards N. Drew
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