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Group III nitride compound semiconductor device

Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With heterojunction
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Group III nitride compound semiconductor device

Active solid-state devices (e.g. – transistors – solid-state diode – Heterojunction device – Between different group iv-vi or ii-vi or iii-v compounds...
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Group III nitride compound semiconductor device

Active solid-state devices (e.g. – transistors – solid-state diode – Heterojunction device – With lattice constant mismatch
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Group III nitride compound semiconductor device

Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Heterojunction
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Group III nitride compound semiconductor device

Active solid-state devices (e.g. – transistors – solid-state diode – Heterojunction device – Between different group iv-vi or ii-vi or iii-v compounds...
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Group III nitride compound semiconductor device

Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified material other than unalloyed aluminum
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Group III nitride compound semiconductor device

Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With housing or contact structure
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Group III nitride compound semiconductor device

Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Heterojunction
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Group III nitride compound semiconductor device and group...

Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With heterojunction
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Group III nitride compound semiconductor device and method...

Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With particular semiconductor material
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Group III nitride compound semiconductor device and method...

Active solid-state devices (e.g. – transistors – solid-state diode – Specified wide band gap semiconductor material other than...
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Group III nitride compound semiconductor device and method...

Active solid-state devices (e.g. – transistors – solid-state diode – Heterojunction device – With lattice constant mismatch
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Group III nitride compound semiconductor device having a...

Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With particular semiconductor material
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Group III nitride compound semiconductor devices and method...

Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure
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Group III nitride compound semiconductor light emitting device

Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With heterojunction
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Group III nitride compound semiconductor light emitting device h

Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With heterojunction
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Group III nitride compound semiconductor light-emitting device

Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With heterojunction
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Group III nitride compound semiconductor light-emitting device

Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Heterojunction
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Group III nitride compound semiconductor light-emitting device

Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Heterojunction
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Group III nitride compound semiconductor light-emitting device

Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure
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